DocumentCode
2764712
Title
High Density Planes Deposition Kinetics and Facets Propagation in Silicon Selective Epitaxial Growth
Author
Loubet, N. ; Talbot, A. ; Dutartre, D.
Author_Institution
STMicroelectronics, Crolles
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In this paper, we are investigating the silicon growth on such profiles resulting from the vapour phase HCl treatment. Facet apparition and kinetics are investigated as a function of the temperature and initial surface morphology
Keywords
elemental semiconductors; epitaxial growth; reaction kinetics; semiconductor growth; silicon; surface morphology; surface treatment; HCl; Si; facet apparition; facet kinetics; facets propagation; high density plane deposition kinetics; silicon selective epitaxial growth; surface morphology; vapour phase HCl treatment; Chemical vapor deposition; Chemistry; Epitaxial growth; Etching; Germanium silicon alloys; Hydrogen; Kinetic theory; Morphology; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246519
Filename
1716013
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