DocumentCode :
2764731
Title :
Growth Kinetics of Si and SiGe on Si
Author :
Hartmann, J.M. ; Burdin, M. ; Rolland, G. ; Billon, T.
Author_Institution :
Centre d´Etudes Atomiques, Grenoble
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We propose in this paper a detailed study of the growth kinetics of Si and SiGe in reduced pressure chemical vapor deposition on Si(100), Si(110) and Si(111) substrates. The gaseous chemistry used, dichlorosilane (SiH2Cl2) + germane (GeH4) + hydrochloric acid (HCl), is selective versus SiO2 and Si3N4. One should thus greatly benefit from such data when growing selectively either recessed SiGe sources and drains or Si raised sources and drains in the active regions of (110) pMOSFETs, when depositing SiGe in the (111) grooves of V-MOSFETs, when growing Si or SiGe on the (110) sidewalls of FinFETs etc
Keywords :
Ge-Si alloys; chemical vapour deposition; germanium compounds; silicon compounds; surface morphology; FinFET; GeH4; Si3N4; SiGe; SiH2Cl2; SiO2; V-MOSFET; growth kinetics; pMOSFET; reduced pressure chemical vapor deposition; Chemical vapor deposition; Chemistry; Distributed control; Germanium silicon alloys; Hydrogen; Kinetic theory; Paper technology; Silicon germanium; Temperature dependence; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246520
Filename :
1716014
Link To Document :
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