Title :
High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition
Author :
Chung, K.H. ; Sturm, James C. ; Sanchez, E. ; Kuppurao, Satheesh
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ
Abstract :
The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported. The high growth rates are enabled by a novel high-order silane (HOS) silicon precursor
Keywords :
chemical vapour deposition; electron mobility; epitaxial growth; silicon compounds; wide band gap semiconductors; 575 C; SiC; chemical vapor deposition; electron carrier mobility; epitaxial silicon-carbon alloys; high-order silane precursor; Chemical technology; Chemical vapor deposition; Hydrogen; MOSFETs; Materials science and technology; Plasma temperature; Silicon alloys; Tensile strain; X-ray diffraction; X-ray scattering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246523
