DocumentCode :
2764788
Title :
Three-Dimensional Compositional Analysis of SiGe Structures with a Laser Assisted Local Electrode Atom Probe
Author :
Thompson, Keith ; Larson, D.J. ; Bunion, J.H. ; Kelly, T.F.
Author_Institution :
Imago Sci. Instruments Corp., Madison, WI
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
The addition of high speed laser pulsing and a local electrode geometry has transformed the 3D atom probe into a characterization tool that is capable of analyzing Si-based nanostructures on an atom-by-atom basis (K. Thompson, 2005 and K. Thompson, 2006) . Doped and undoped SiGe structures were successfully analyzed in three dimensions with the laser assisted local electrode atom probe (L2EAP). The results correlate favorably to secondary ion mass spectrometry (SIMS). Advantages and unique capabilities of the atom-probe are described
Keywords :
Ge-Si alloys; atom probe field ion microscopy; secondary ion mass spectroscopy; 3D atom probe; SiGe; laser assisted local electrode atom probe; laser pulsing; local electrode geometry; secondary ion mass spectrometry; Atom lasers; Atomic beams; Atomic measurements; Electrodes; Geometrical optics; Germanium silicon alloys; Mass spectroscopy; Nanostructures; Probes; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246524
Filename :
1716018
Link To Document :
بازگشت