Title :
New experimental findings on process-induced hot-carrier degradation of deep-submicron N-MOSFETs
Author :
Lie, D.Y.C. ; Yota, J. ; Xia, W. ; Joshi, A.B. ; Williams, R.A. ; Zwingman, R. ; Chung, L. ; Kwong, D.L.
Author_Institution :
Adv. Process Technol., Conexant Syst., Newport Beach, CA, USA
Abstract :
Severe hot-carrier degradation has been observed in deep-submicron N-MOSFETs, and is shown to be caused by several advanced device processing steps. These processing steps can also introduce significant changes in other device parameters, such as the threshold voltage and transconductance, etc., for devices without any hot-carrier stress. The two major achievements of this work are that: (1) we systematically illustrate that the process-induced lifetime degradation is most sensitive to details of back-end wafer processing, particularly when it involves high density plasma (HDP-CVD) oxide deposition and H2 annealing; (2) we demonstrate experimentally, for the first time, that using a properly designed SiN pre-metal-dielectric (PMD) liner process can most effectively stop the back-end process-induced lifetime degradation. This result is different from previous reports which indicated that an additional SiN liner could further degrade the device lifetime (Tokitoh et al., 1995 and 1997; Cheek et al., 1997). We show that this apparent inconsistency is partly because one must be very careful in designing the liner process to make it work properly, and partly because the previous studies did not cover back-end process-induced hot-carrier effects
Keywords :
MOSFET; annealing; dielectric thin films; hot carriers; plasma CVD; semiconductor device manufacture; semiconductor device metallisation; semiconductor device reliability; H2; H2 annealing; N-MOSFETs; SiN; SiN liner; SiN pre-metal-dielectric liner process; SiO2-Si; back-end process-induced hot-carrier effects; back-end process-induced lifetime degradation; back-end wafer processing; device lifetime; device parameters; device processing; high density plasma CVD oxide deposition; hot-carrier degradation; hot-carrier stress; liner process design; process-induced hot-carrier degradation; process-induced lifetime degradation; threshold voltage; transconductance; Degradation; Hot carriers; MOSFET circuits; Plasma density; Plasma devices; Plasma materials processing; Silicon compounds; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761640