Title :
A model for channel hot carrier reliability degradation due to plasma damage in MOS devices
Author :
Rangan, Sanjay ; Krishnan, Srikanth ; Amerasekara, Ajith ; Aur, Shian ; Ashok, S.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An empirical relationship between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to the channel hot carrier lifetime (τ) of both N- and P-MOSFETs. A 10× increase in AR results in a 7× fall in its normalized lifetime for NMOS and a 10× fall for the PMOS. A process constant P and a device constant D have been introduced. Process-related factors such as reactor design and process conditions are accounted for by P, while D includes the device features, such as gate-drain overlap and dielectric technology
Keywords :
MOSFET; dielectric thin films; hot carriers; plasma materials processing; semiconductor device models; semiconductor device reliability; MOS devices; N-MOSFETs; P-MOSFETs; antenna ratio; channel hot carrier lifetime; channel hot carrier reliability degradation model; device channel hot carrier lifetime; device constant; device features; dielectric technology; gate-drain overlap; normalized lifetime; plasma damage; process conditions; process constant; process induced damage; process-related factors; reactor design; Degradation; Hot carriers; Life estimation; Lifetime estimation; MOS devices; MOSFET circuits; Plasma devices; Plasma materials processing; Plasma properties; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761641
