GaAs HBT power amplifier for WiBro applications

Author

Li, Ping ; Handling Fun ; Prestia, Larry ; Huber, Christopher ; Kadambala, Sridhar ; Masse, Cecile ; Wilson, Dale ; Balboni, Ed

Author_Institution

Analog Devices, Inc., Wilmington

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1873

Lastpage

1876

Abstract

In this work, we report, for the first time, a 3.5 V class AB GaAs HBT power amplifier for WiMax/WiBro applications. The amplifier has 3 amplification stages to meet the gain requirement. It is class AB design to achieve both high linearity and efficiency. At 2.35 GHz with Vcc=3.5 V, the amplifier deliveries 25 dBm linear power to the load with 28 dB of gain and 20% of efficiency. Driven by OFDM signal consisting of 256 carriers with 16 QAM modulation the amplifier showed Error Vector Magnitude (EVM) of less than 3.5%, which meets the linearity specification of WiBro.

Keywords

III-V semiconductors; OFDM modulation; UHF bipolar transistors; UHF power amplifiers; WiMax; broadband networks; gallium arsenide; heterojunction bipolar transistors; quadrature amplitude modulation; GaAs; HBT power amplifier; OFDM signal; QAM modulation; WiMax-WiBro applications; class AB design; efficiency 20 percent; error vector magnitude; frequency 2.35 GHz; gain 28 dB; voltage 3.5 V; Circuit simulation; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Nonlinear distortion; OFDM; Power amplifiers; Power generation; Transmitters; WiMAX; EVM; IMD; WiMax; Wibro; amplifiers; linear power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429774

Filename

4429774