• DocumentCode
    2764881
  • Title

    A fast and simple methodology for lifetime prediction of ultra-thin oxides

  • Author

    Nigam, T. ; Degraeve, R. ; Groeseneken, G. ; Heyns, M.M. ; Maes, H.E.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    381
  • Lastpage
    388
  • Abstract
    A fast and simple method has been introduced to calculate the time-to-breakdown tBD in ultra-thin gate oxides. This method is based on monitoring the increase in the current during stress. This new method allows one to determine the maximum voltage at which a gate oxide will comply with 10 year lifetime, taking into account both tBD-spread and area dependence
  • Keywords
    MOS capacitors; MOS integrated circuits; dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; leakage currents; monitoring; MOS capacitors; Si; SiO2-Si; area dependence; current monitoring; electrical stress; gate oxides; lifetime compliance; lifetime prediction; maximum voltage; stress-induced leakage current; time-to-breakdown; time-to-breakdown spread; ultra-thin oxides; Breakdown voltage; Current measurement; Dielectric breakdown; Electron traps; Extrapolation; Fabrication; Leakage current; Low voltage; Stress measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-5220-3
  • Type

    conf

  • DOI
    10.1109/RELPHY.1999.761643
  • Filename
    761643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764881