Title :
A fast and simple methodology for lifetime prediction of ultra-thin oxides
Author :
Nigam, T. ; Degraeve, R. ; Groeseneken, G. ; Heyns, M.M. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A fast and simple method has been introduced to calculate the time-to-breakdown tBD in ultra-thin gate oxides. This method is based on monitoring the increase in the current during stress. This new method allows one to determine the maximum voltage at which a gate oxide will comply with 10 year lifetime, taking into account both tBD-spread and area dependence
Keywords :
MOS capacitors; MOS integrated circuits; dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; leakage currents; monitoring; MOS capacitors; Si; SiO2-Si; area dependence; current monitoring; electrical stress; gate oxides; lifetime compliance; lifetime prediction; maximum voltage; stress-induced leakage current; time-to-breakdown; time-to-breakdown spread; ultra-thin oxides; Breakdown voltage; Current measurement; Dielectric breakdown; Electron traps; Extrapolation; Fabrication; Leakage current; Low voltage; Stress measurement; Time measurement;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761643
