Title :
Trap-assisted tunneling current through ultra-thin oxide
Author :
Wu, J. ; Register, L.F. ; Rosenbaum, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL, USA
Abstract :
The increase of gate current in a MOS device following high field stressing is referred to as stress-induced leakage current (SILC) and is widely believed to result from trap-assisted tunneling (TAT). Based on a consideration of the relative magnitudes of the direct and trap-assisted tunneling probabilities, this work explains why SILC is observed only within a “window” of oxide thickness. This work also provides further experimental evidence that SILC is due to inelastic trap-assisted tunneling of electrons from the cathode conduction band
Keywords :
MOS capacitors; MOS integrated circuits; conduction bands; dielectric thin films; electron traps; high field effects; integrated circuit testing; leakage currents; probability; tunnelling; MOS capacitors; MOS device; SILC; SiO2-Si; cathode conduction band; direct tunneling probability; gate current; high field stressing; inelastic trap-assisted electron tunneling; oxide thickness window; stress-induced leakage current; trap-assisted tunneling; trap-assisted tunneling current; trap-assisted tunneling probability; ultra-thin oxide; Cathodes; Current density; Current measurement; Electrodes; Electron traps; Frequency; Leakage current; MOS devices; Thickness measurement; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761644
