Title :
A model of the stress time dependence of SILC
Author :
Lu, Q. ; Cheung, K.P. ; Ciampa, N.A. ; Liu, C.T. ; Chang, C.P. ; Colonell, J.I. ; Lai, W.-Y.-C. ; Liu, R. ; Miner, J.F. ; Vaidya, H. ; Pai, C.S. ; Clemens, J.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A number of groups have reported that the stress-induced leakage current (SILC) follows a power law dependence on the stress time. In this study, we observed that the power-law behaviour is only an approximation of the fast rising part of a more complex behaviour. SILC rises during the initial stress stage and saturates after a long stress time. Based on the trap-assisted tunneling (TAT) model, we show that the stress time dependence of SILC is better described as the depletion of multi-precursors of traps. Although the new model involves many fitting parameters, we show that the fitting results are consistent with the physical interpretation of these parameters. To further support the physical interpretation, we examined these parameters with annealing experiments
Keywords :
CMOS integrated circuits; MOS capacitors; annealing; curve fitting; dielectric thin films; electron traps; high field effects; hole traps; integrated circuit modelling; integrated circuit testing; leakage currents; tunnelling; CMOS process; MOS capacitors; SILC; SILC saturation; SILC stress time dependence model; SiO2-Si; annealing; fitting parameters; initial stress stage; physical interpretation; power law dependence; power-law behaviour; stress time; stress time dependence; stress-induced leakage current; trap multi-precursor depletion; trap-assisted tunneling model; Annealing; Capacitors; Hydrogen; Leakage current; Mechanical factors; Power engineering computing; Power generation; Stress; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761645
