SiGe/Si "Micro-Origami" Epitaxial MEMS Device on SOI Substrate

Author

Tokuda, Takashi ; Nunoshita, M. ; Ohta, Jun

Author_Institution

Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol.

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

In the last decade, fabrication technology of microelectromechanical system (MEMS) was greatly developed and various devices have been demonstrated. Epitaxial MEMS structure is one of the variations of MEMS structure. The epitaxial MEMS has some advantages such as atomically flat surfaces and possibility of direct implementation of circuitry on the MEMS structure. In this work, we fabricated an epitaxial MEMS structure based on strain-induced bending of a SiGe/Si released layer. The present MEMS strucuture was named as "micro-origami". We released a SiGe/Si heteroepitaxial layer and a micromirror device was fabricated. The fabrication process and characteristics of the micro-origami device is described

Keywords

Ge-Si alloys; elemental semiconductors; epitaxial growth; micromechanical devices; micromirrors; silicon; silicon-on-insulator; SiGe-Si; epitaxial MEMS structure; micro-origami device; microelectromechanical system; micromirror device; silicon-on-insulator; Atomic layer deposition; Circuits; Fabrication; Germanium silicon alloys; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Micromirrors; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246529

Filename

1716023