Title :
Highly Efficient Silicon Michelson Interferometer Modulators
Author :
Xianyao Li ; Xi Xiao ; Hao Xu ; Zhiyong Li ; Tao Chu ; Jinzhong Yu ; Yude Yu
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
Keywords :
Mach-Zehnder interferometers; Michelson interferometers; elemental semiconductors; mirrors; optical design techniques; optical fabrication; optical modulation; optical phase shifters; optical waveguides; phase shifting interferometry; silicon; Si; bit rate 25 Gbit/s; bit rate 30 Gbit/s; device design; enhanced Mach-Zehnder interferometer; extinction ratio; high-speed silicon Michelson interferometer modulators; light-carrier interaction; modulation efficiency; optical fabrication; optical interconnects; optical structure; phase shifters; phase shifting waveguides; reflective mirrors; size 500 mum; voltage -1 V to -6 V; High speed optical techniques; Optical device fabrication; Optical modulation; Optical waveguides; Phase shifters; Silicon; High-speed; Michelson interferometer; optical modulation; silicon modulators;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2238625