DocumentCode :
2765026
Title :
InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers
Author :
Tatavarti, Rao ; Wibowo, A. ; Martin, G. ; Tuminello, F. ; Youtsey, C. ; Hillier, G. ; Pan, N. ; Wanlass, M.W. ; Romero, M.
Author_Institution :
MicroLink Devices Inc., Niles, IL, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO IMM solar cells exhibited an efficiency of 30% at one sun AM1.5D illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The TJ ELO cells had fill factor (FF) >85%, open circuit voltage (Voc) of 2.78V, and short circuit current density (Jsc) of 12.64 mA/cm2. IMM ELO cells exhibited a peak efficiency of 36.3% at concentration of 264suns.
Keywords :
arsenic compounds; current density; epitaxial layers; gallium compounds; indium compounds; phosphorus compounds; solar cells; GaAs; InGaAs; InGaP; current density; epitaxial lifted off wafer; fill factor; inverted metamorphic solar cell; triple junction solar cell; voltage 2.78 V;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616004
Filename :
5616004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2765026
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