• DocumentCode
    2765042
  • Title

    Direct Measurement of HH2-HH1 Intersubband Lifetimes in SiGe Quantum Cascade Structures

  • Author

    Rauter, Patrick ; Fromherz, Thomas ; Bauer, G. ; Vinh, N.Q. ; Phillips, Jonathon ; Pidgeon, C.R. ; Murdin, B.N. ; Diehl, L. ; Dehlinger, G. ; Grutzmacher, D.

  • Author_Institution
    Inst. for Semicond. & Solid State Phys., Johannes-Kepler-Univ., Linz
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the first direct measurement of the HH2-HH1 relaxation time for a SiGe QW with transition energy above the optical phonon frequency. The experiments have been performed for an active, electrically biased SiGe structure, and thus our results constitute a key parameter for the design and dynamic simulation of SiGe quantum cascade laser structures. The paper presents the ´as-measured´ photocurrent signal data, from which only a virtually constant background has been subtracted for the ´TM first´ and ´TE first´ cases. On the timescale of our experiment, an exponential HH2-HH1 decay with a single relaxation time significantly larger (~550 fs) than the time resolution of the experiment is observed when the sample is excited by the TM pulse first. In addition the technique provides a path to the measurement of dynamics in quantum cascade structures under operating electrical injection conditions
  • Keywords
    Ge-Si alloys; elemental semiconductors; quantum cascade lasers; relaxation; HH2-HH1 intersubband lifetimes; HH2-HH1 relaxation time; SiGe; SiGe QW; SiGe quantum cascade structures; direct measurement; electrically biased SiGe structure; exponential HH2-HH1 decay; optical phonon frequency; photocurrent signal data; transition energy; Energy measurement; Frequency measurement; Germanium silicon alloys; Optical design; Phonons; Photoconductivity; Quantum cascade lasers; Silicon germanium; Tellurium; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246536
  • Filename
    1716030