DocumentCode :
2765093
Title :
Silver glass die attach adhesives for power semiconductor devices
Author :
Dequidt, M. ; Guinet, J. ; Hubert, J.C.
Author_Institution :
La Telemecanique, Paris, France
fYear :
1989
fDate :
26-28 Apr 1989
Firstpage :
337
Lastpage :
341
Abstract :
The authors examine mechanisms of adhesion between gold or silver backside chips and metallized substrates commonly used in individual power hybrid applications. EDS (energy dispersive spectroscopy) analyses and SEM (scanning electron microscopy) observations indicate that adhesion is due to silver diffusion in the different metal layers, whereas for alumina the bond is chemical. The bond for the Au- or Ag-backside/silicon-die/silver-glass/Ag-plated copper systems is probably due to interdiffusion mechanisms. An optimized process for power chips has been developed; it is demonstrated that the presence of voids is dependent on the drying temperature
Keywords :
composite materials; glass; hybrid integrated circuits; materials testing; microassembling; power integrated circuits; EDS; SEM; Si die; die attach adhesives; drying temperature; energy dispersive spectroscopy; individual power hybrid applications; interdiffusion mechanisms; mechanisms of adhesion; metallized substrates; optimized process; power chips; power semiconductor devices; scanning electron microscopy; voids; Adhesives; Chemical analysis; Glass; Gold; Metallization; Microassembly; Power semiconductor devices; Scanning electron microscopy; Silver; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
Conference_Location :
Nara
Type :
conf
DOI :
10.1109/IEMTS.1989.76170
Filename :
76170
Link To Document :
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