Electroluminescence from the Ge Quantum Dot Metal-Oxide-Semiconductor Tunneling Diodes

Author

Liao, M.H. ; Cheng, T.-H. ; Chen, T.C. ; Lai, Chi-Hui ; Lee, Chia-Han ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng. & Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ., Taipei

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

In summary, the ~1.5 mum Ge QD MOS LED which is fully compatible with ULSI process is reported for the first time. The origin of the emission is due to the radiative recombination between the electrons and holes confined in the Ge QD. The electrons also recombined with holes at the Si/oxide interface and the band edge light emission from Si is also observed

Keywords

MIS devices; electroluminescence; electron-hole recombination; elemental semiconductors; germanium; light emitting diodes; semiconductor quantum dots; silicon; tunnel diodes; Ge; QD MOS LED device; Si; ULSI process; band edge light emission; electroluminescence; metal-oxide-semiconductor tunneling diodes; quantum dots; radiative recombination; Electroluminescence; Infrared detectors; Light emitting diodes; P-i-n diodes; Quantum dots; Temperature; Tunneling; US Department of Transportation; Ultra large scale integration; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246540

Filename

1716034