Title :
Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge0.15/Si-on-insulator
Author :
Tzeng, S.S. ; Li, Peter W. ; Liao, W.M. ; Lia, W.T.
Author_Institution :
Dept. of Electr. Eng., National Central Univ., Taoyuan
Abstract :
We have demonstrated a simple method to fabricate the MIM PD with Ge QDs. 7 nm Ge QDs embedded in SiO2 matrix could be formed by selective oxidation of Si0.85Ge0.15-on-insulator structure. Blue to ultraviolet photoemissions from Ge QDs have been experimentally observed at room temperature due to strong quantum confinement effect. A Ge QD PD with dark current of 3.13 muA/cm2 and responsivity of 85.6 muA/W at 430nm has also demonstrated
Keywords :
Ge-Si alloys; MIM devices; elemental semiconductors; germanium; oxidation; photoconductivity; photodetectors; photoemission; semiconductor quantum dots; silicon compounds; silicon-on-insulator; 430 nm; 7 nm; MIM PD devices; Si0.85Ge0.15-Si; SiO2; dark current; metal-insulator-metal photodetectors; quantum confinement effect; quantum dots; selective oxidation; single crystalline silicon-on-insulator; ultraviolet photoemissions; CMOS technology; Crystallization; Dark current; Electrodes; Metal-insulator structures; Oxidation; Photodetectors; Quantum dots; US Department of Transportation; Ultra large scale integration;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246541
