• DocumentCode
    2765148
  • Title

    Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge0.15/Si-on-insulator

  • Author

    Tzeng, S.S. ; Li, Peter W. ; Liao, W.M. ; Lia, W.T.

  • Author_Institution
    Dept. of Electr. Eng., National Central Univ., Taoyuan
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have demonstrated a simple method to fabricate the MIM PD with Ge QDs. 7 nm Ge QDs embedded in SiO2 matrix could be formed by selective oxidation of Si0.85Ge0.15-on-insulator structure. Blue to ultraviolet photoemissions from Ge QDs have been experimentally observed at room temperature due to strong quantum confinement effect. A Ge QD PD with dark current of 3.13 muA/cm2 and responsivity of 85.6 muA/W at 430nm has also demonstrated
  • Keywords
    Ge-Si alloys; MIM devices; elemental semiconductors; germanium; oxidation; photoconductivity; photodetectors; photoemission; semiconductor quantum dots; silicon compounds; silicon-on-insulator; 430 nm; 7 nm; MIM PD devices; Si0.85Ge0.15-Si; SiO2; dark current; metal-insulator-metal photodetectors; quantum confinement effect; quantum dots; selective oxidation; single crystalline silicon-on-insulator; ultraviolet photoemissions; CMOS technology; Crystallization; Dark current; Electrodes; Metal-insulator structures; Oxidation; Photodetectors; Quantum dots; US Department of Transportation; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246541
  • Filename
    1716035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765148