Identification of N-H related defects in GaAsN grown by chemical beam epitaxy

Three infrared active defects in GaAsN grown by chemical beam epitaxy (CBE) are identified as N-H related defects which are determinative of electrical property of (In)GaAsN. One N-H related defect is also observed in GaAsN grown by metalorganic chemical-vapor deposition (MOCVD). However other two N-H related defects are only observed in GaAsN grown by CBE. Therefore there is possibility that these two defects are characteristic defects of CBE. We also clarify number of hydrogen in the N-H related defects which is important factor of the defects´ electrical property. One N-H related defect includes two hydrogens and two N-H related defects include one hydrogen, respectively. These results are derived by using deuterated N source.