Title :
High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches
Author :
Heinemann, B. ; Barth, R. ; Knoll, D. ; Rucker, Holger ; Tillack, Bernd ; Winkler, Wolfgang
Author_Institution :
IHP, Oder
Abstract :
This paper describes the architecture of the BiCMOS processes highlighting the modular scheme for the integration of the bipolar modules into a common CMOS platform. HBT design issues associated with the implanted collector wells and the key set of electrical HBT parameters are presented as well
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; BiCMOS processes; CMOS platform; HBT design; bipolar modules; electrical HBT parameters; high-performance BiCMOS technologies; implanted collector; modular scheme; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Costs; Fabrication; Heterojunction bipolar transistors; Hip; Implants; Radio frequency;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246543
