• DocumentCode
    2765179
  • Title

    High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches

  • Author

    Heinemann, B. ; Barth, R. ; Knoll, D. ; Rucker, Holger ; Tillack, Bernd ; Winkler, Wolfgang

  • Author_Institution
    IHP, Oder
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper describes the architecture of the BiCMOS processes highlighting the modular scheme for the integration of the bipolar modules into a common CMOS platform. HBT design issues associated with the implanted collector wells and the key set of electrical HBT parameters are presented as well
  • Keywords
    BiCMOS integrated circuits; bipolar integrated circuits; BiCMOS processes; CMOS platform; HBT design; bipolar modules; electrical HBT parameters; high-performance BiCMOS technologies; implanted collector; modular scheme; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Costs; Fabrication; Heterojunction bipolar transistors; Hip; Implants; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246543
  • Filename
    1716037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765179