Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations

Author

Sakai, Akihiko ; Taoka, Noriyuki ; Mochizuki, Sho ; Yukawa, K. ; Nakatsuka, Osamu ; Takeda, Shigeki ; Kimura, Shunji ; Ogawa, Michiko ; Zaima, Shigeaki

Author_Institution

Graduate Sch. of Eng., Nagoya Univ.

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We have demonstrated control and characterization of strain in SiGe and Ge layers on Si(001) substrates with engineered misfit dislocations at the heterointerface. X-ray microdiffraction revealed quantitatively fine structures in micrometer-sized regions of the SiGe layers. The introduction of PEDN can alter the manner of strain relaxation of SiGe on Si(001) and raise the possibility of solving problems caused by the 60deg dislocation

Keywords

Ge-Si alloys; X-ray diffraction; dislocation damping; elemental semiconductors; germanium; silicon; strain control; stress relaxation; PEDN; SiGe-Si; X-ray microdiffraction; misfit dislocations; semiconductor heterostructures; strain characterization; strain control; strain relaxation; Annealing; Capacitive sensors; Crystallization; Fluctuations; Germanium silicon alloys; MOSFETs; Morphology; Silicon germanium; Strain control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246544

Filename

1716038