Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

Author

Piontek, A. ; Vanhoucke, T. ; Van Huylenbroeck, Stefaan ; Choi, Li Jen ; Hurkx, Godefridus Adrianus Maria ; Hijzen, E. ; Decoutere, Stefaan

Author_Institution

IMEC, Leuven

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

In this paper, we presented a comparative study of the HBT reliability of scaled 200GHz SiGe:C quasi self-aligned HBTs integrated in a 0.13mum BiCMOS process with airgap DTI. The influence of scaling and airgap DTI under the three stress conditions (reverse emitter-base current stress, very high forward current stress and mixed-mode stress) on the reliability performance is reported. It was demonstrated that for all three stress regimes, only limited increase in the base current degradation was measured and no change in the collector current has been observed. Despite the lateral scaling of the device and higher self-heating due to the airgap DTI, the base current degradation remains limited under the specified stress conditions

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; isolation technology; millimetre wave bipolar transistors; semiconductor device reliability; stress effects; 0.13 micron; 200 GHz; BiCMOS process; HBT reliability; SiGe:C; airgap DTI; airgap deep trench isolation; base current degradation; lateral device scaling; mixed-mode stress; reliability performance; reverse emitter-base current stress; very high forward current stress; Current density; Degradation; Diffusion tensor imaging; Doping profiles; Heterojunction bipolar transistors; Millimeter wave devices; Radio frequency; Semiconductor devices; Stress; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246548

Filename

1716042