Thermal Resistance of SiGe HBTs at High Power Densities

Author

Hui Li ; Zhenqiang Ma ; Pingxi Ma ; Racanelli, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

In summary, thermal resistance of SiGe HBT at different power densities is characterized for the first time, revealing the decreasing trend of thermal resistance with increased dissipated power in the devices. The different behavior of thermal resistance than that of GaAs HBT at high power densities is due to the higher thermal conductivity of Si substrate and smaller power density of SiGe HBTs than that of GaAs. The thermal resistance characteristics revealed for SiGe HBT will help establish more accurate SiGe HBT thermal models for reliable circuit design

Keywords

Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; thermal conductivity; thermal resistance; GaAs; SiGe; heterojunction bipolar transistors; thermal conductivity; thermal resistance; Electronic ballasts; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Power measurement; Resistors; Silicon germanium; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246549

Filename

1716043