Title :
Thermal Resistance of SiGe HBTs at High Power Densities
Author :
Hui Li ; Zhenqiang Ma ; Pingxi Ma ; Racanelli, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
In summary, thermal resistance of SiGe HBT at different power densities is characterized for the first time, revealing the decreasing trend of thermal resistance with increased dissipated power in the devices. The different behavior of thermal resistance than that of GaAs HBT at high power densities is due to the higher thermal conductivity of Si substrate and smaller power density of SiGe HBTs than that of GaAs. The thermal resistance characteristics revealed for SiGe HBT will help establish more accurate SiGe HBT thermal models for reliable circuit design
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; thermal conductivity; thermal resistance; GaAs; SiGe; heterojunction bipolar transistors; thermal conductivity; thermal resistance; Electronic ballasts; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Power measurement; Resistors; Silicon germanium; Thermal conductivity; Thermal resistance;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246549
