Title :
Dynamics of Uniform Si/SiGe Uniaxial Strain Generation on Compliant Insulating Substrates
Author :
Peterson, Rebecca L. ; Sturm, James C.
Author_Institution :
Princeton Inst. for the Sci. & Technol. of Mater., Princeton Univ., NJ
Abstract :
We have developed a model of the time dependence of asymmetric strain generation in Si/SiGe bilayers on compliant substrates, and established a process window for maximum strain asymmetry. The resulting uniaxial silicon strain of 0.75% tension is well-controlled and uniform across the SOI islands
Keywords :
Ge-Si alloys; internal stresses; silicon-on-insulator; substrates; SOI islands; Si-SiGe; asymmetric strain generation; compliant insulating substrates; compliant substrates; time dependence; uniaxial silicon strain; uniform uniaxial strain generation; Annealing; Capacitive sensors; Compressive stress; Dielectrics and electrical insulation; Germanium silicon alloys; Numerical models; Silicon germanium; Substrates; Tensile stress; Uniaxial strain;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246553
