Title :
Progress in SiGe Technology Toward Fully Integrated mmWave ICs
Author :
Gaucher, B. ; Reynolds, S. ; Floyd, Brian ; Pfeiffer, U. ; Beukema, Troy ; Joseph, Alvin ; Mina, Essam ; Orner, Bill ; Wachnik, Richard ; Walter, K.
Author_Institution :
IBM Res., Yorktown Heights, NY
Abstract :
We described newly developed, enhanced technology and enablement features that lead to state of the art mmwave ICs capable of meeting Gbps speeds required of emerging applications. Die photographs of the Rx and Tx are shown in (Floyd, 2006). The die sizes are 3.4times1.7mm2 and 4.0times1.6mm2, respectively
Keywords :
Ge-Si alloys; millimetre wave integrated circuits; transceivers; SiGe; die photographs; millimetre wave integrated circuits; mm wave integrated circuits; BiCMOS integrated circuits; Electromagnetic interference; Germanium silicon alloys; Packaging; Rivers; Schottky diodes; Silicon germanium; Transceivers; Varactors; Waveguide junctions;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246556
