• DocumentCode
    2765422
  • Title

    p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applications

  • Author

    Orner, B.A. ; Liu, Quanwei ; Johnson, Jamie ; Rassel, Robert ; Liu, Xindong ; Sheridan, D. ; Joseph, Alvin ; Gaucher, B.

  • Author_Institution
    IBM Corp., Essex Junction, VT
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency range
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; millimetre wave diodes; p-i-n diodes; SiGe; millimeter wave frequency range; monolithic BiCMOS technology; p-i-n diodes; Anodes; BiCMOS integrated circuits; Cathodes; Frequency; Heterojunction bipolar transistors; Insertion loss; Millimeter wave technology; P-i-n diodes; Parasitic capacitance; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246560
  • Filename
    1716054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765422