Title :
p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applications
Author :
Orner, B.A. ; Liu, Quanwei ; Johnson, Jamie ; Rassel, Robert ; Liu, Xindong ; Sheridan, D. ; Joseph, Alvin ; Gaucher, B.
Author_Institution :
IBM Corp., Essex Junction, VT
Abstract :
An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency range
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; millimetre wave diodes; p-i-n diodes; SiGe; millimeter wave frequency range; monolithic BiCMOS technology; p-i-n diodes; Anodes; BiCMOS integrated circuits; Cathodes; Frequency; Heterojunction bipolar transistors; Insertion loss; Millimeter wave technology; P-i-n diodes; Parasitic capacitance; Silicon germanium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246560
