Title :
SiGe Impulse Generator for Single-Band Ultra-Wideband Applications
Author :
Dederer, J. ; Trasser, A. ; Schumacher, Hermann
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
Abstract :
In this paper, we present a compact impulse generator that is fabricated in an inexpensive ATMEL SiGe HBT technology (Schuppen et al., 2001). The realized circuit exhibits pulses with adjustable peak-to-peak amplitudes of up to 530mV. The corresponding broadband spectrum of the ultra-short pulses is centered around 5.7GHz
Keywords :
Ge-Si alloys; bipolar transistor circuits; microwave circuits; pulse generators; ATMEL; HBT technology; SiGe; broadband spectrum; impulse generator; single band ultra wideband applications; ultra-short pulses; Germanium silicon alloys; Pulse amplifiers; Pulse circuits; Pulse generation; Pulse measurements; Pulse shaping methods; Resistors; Shape; Silicon germanium; Ultra wideband technology;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246561
