Title :
Phosphorus Segregation Control for SiGe:C Epitaxy
Author :
Yamamoto, Yuji ; Köpke, Klaus ; Zaumseil, Peter ; Tillack, Bernd
Author_Institution :
IHP, Frankfurt
Abstract :
P segregation behavior in SiGe:C layer of different Ge content and different growth temperature was investigated. For each Ge content, steepness of P spike became lower with increasing growth temperature. In comparison at the same growth temperature, steepness of P spikes in SiGe:C with 20% Ge content is lower than that with 10% Ge content. The difference becomes higher at higher growth temperature. A two-step steepness profile was observed in 30% SiGe:C layer, and the possible reason of this behavior may be related to relaxation of the SiGe:C layer
Keywords :
Ge-Si alloys; phosphorus; semiconductor doping; semiconductor growth; semiconductor materials; surface segregation; P; SiGe:C; germanium content; germanium growth temperature; phosphorus segregation behavior; relaxation phenomena; two-step steepness profile; Bonding; Doping profiles; Epitaxial growth; Fabrication; Germanium silicon alloys; HEMTs; MODFETs; Silicon germanium; Temperature; X-ray scattering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246564
