Title :
Interdiffusion in SiGe/Si Epitaxial Heterostructures
Author :
Guangrui Xia ; Canonico, Massimo ; Hoyt, Judy L.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
The Si-Ge interdiffusivity in epitaxial strained Si/Si1-y Gey/strained Si/relaxed Si1-xGex and strained Si/relaxed Si1-xGex heterostructures was systematically extracted for Ge fractions between 0 and 0.56 over a temperature range of 770 - 920 degC. Boltzmann-Matano analysis was applied to extract interdiffusivity from diffused Ge profiles of strained Si/relaxed Si1-xGex heterostructures. TSUPREM-4 was used to fit SIMS profiles and refine the extracted interdiffusivity. Significantly enhanced Si-Ge interdiffusion was observed in Si1-yGey layers under compressive strain. These results were incorporated into an interdiffusion model that successfully predicts experimental interdiffusion of various SiGe heterostructures
Keywords :
Ge-Si alloys; chemical interdiffusion; elemental semiconductors; epitaxial growth; epitaxial layers; semiconductor-insulator boundaries; 770 to 920 C; Boltzmann-Matano analysis; SIMS profiles; SiGe-Si; TSUPREM-4; epitaxial heterostructures; interdiffusion model; Annealing; CMOS technology; Capacitive sensors; Data mining; Germanium silicon alloys; Laboratories; Raman scattering; Silicon germanium; Temperature distribution; Tensile strain;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246566
