Monolithically integrated junction FETS and NEMS

Author

Amponsah, Kwame ; Lal, Amit

Author_Institution

SonicMEMS Lab., Cornell Univ., Ithaca, NY, USA

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

91

Lastpage

94

Abstract

We present the monolithic integration of junction FETS and NEMS for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration due to reduce parasitics and mismatches. In this paper, the JFET is integrated directly into SOI MEMS cantilever to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET. The devices were realized in 2um thick SOI cross-wire beams, with a novel MoSi2 contact metallization for stress minimization and ohmic contact. The pull-in voltage for the NEMS cantilever was 21V and the pinch-off voltage of the JFET was -19V.

Keywords

cantilevers; integrated circuit metallisation; junction gate field effect transistors; monolithic integrated circuits; nanoelectromechanical devices; ohmic contacts; signal processing; silicon-on-insulator; JFET; NEMS cantilever; SOI MEMS cantilever; SOI cross-wire beam; contact metallization; enhanced signal transduction; extra-tight integration; hybrid integration; monolithically integrated junction FET; ohmic contact; pull-in voltage; signal processing; size 2 mum; stress minimization; voltage -19 V; voltage 21 V; Capacitance; JFETs; Junctions; Logic gates; Micromechanical devices; Monolithic integrated circuits; Nanoelectromechanical systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734369

Filename

5734369