• DocumentCode
    2765621
  • Title

    A single lithography vertical NEMS switch

  • Author

    Rubin, J. ; Sundararaman, R. ; Kim, M.K. ; Tiwari, S.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    We demonstrate the use of torsion in nanorelays to achieve low voltages, high speeds, single lithography step construction, and a form useful for configurability and electronic design enhancements in three-dimensional integrated implementations. The combined bending and torsion of self-aligned nanopillars facilitates the first top-down fabricated vertical three terminal nanoscale relay. Experimental devices, even at 500 nm features, operate at ~10 V and μs. Scaling suggests operation down to unit volts.
  • Keywords
    bending; nanoelectromechanical devices; nanolithography; relays; torsion; electronic design enhancement; nanopillar; nanorelay; single lithography vertical NEMS switch; size 500 nm; terminal nanoscale relay; three-dimensional integrated implementation; torsion; Logic gates; Metals; Nanoscale devices; Optical switches; Silicon; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734370
  • Filename
    5734370