MEMS-based thick film PZT vibrational energy harvester

Author

Lei, A. ; Xu, R. ; Thyssen, A. ; Stoot, A.C. ; Christiansen, T.L. ; Hansen, K. ; Lou-Moller, R. ; Thomsen, E.V. ; Birkelund, K.

Author_Institution

Dept. of Micro- & Nanotechnol., Tech. Univ. of Denmark, Lyngby, Denmark

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

125

Lastpage

128

Abstract

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz.

Keywords

energy harvesting; etching; lead compounds; microfabrication; micromechanical devices; silicon; silicon-on-insulator; thick film devices; KOH etch; MEMS; PZT-Si; SOI wafer; frequency 235 Hz; integrated proof mass; mechanical front side protection; optimal resistive load; power 14 muW; resistance 100 kohm; resonant frequency; unimorph silicon-PZT thick film vibrational energy harvester; Acceleration; Energy harvesting; Fabrication; Resonant frequency; Silicon; Thick films; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734377

Filename

5734377