• DocumentCode
    2766134
  • Title

    Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

  • Author

    Ray, T. ; Zhu, H. ; Elango, I.S. ; Meldrum, D.R.

  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    213
  • Lastpage
    216
  • Abstract
    In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary metal-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.
  • Keywords
    CMOS integrated circuits; masks; silicon compounds; sputter etching; CMOS process; KMPR 1025; RIE; SiO2; complimentary metal-oxide semiconductor process; deep reactive ion etching; fused silica; gas flow rate; gaseous composition; hard-bake condition; masking layer; Argon; Conductivity; Etching; Fluid flow; Optical filters; Silicon compounds; Sulfur hexafluoride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734399
  • Filename
    5734399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2766134