Title :
External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes
Author :
Inoue, T. ; Fujiwara, K. ; Sheu, J.K.
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu
Abstract :
Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination of PL intensity under the reverse bias conditions.
Keywords :
gallium; indium compounds; light emitting diodes; nitrogen; photoexcitation; photoluminescence; semiconductor quantum wells; InGaN; blue emission band; external field effects; photoexcitation power dependence; photoluminescence property; quantum-well light-emitting diodes; reverse bias voltage; Gallium nitride; Laser excitation; Light emitting diodes; Photoluminescence; Power engineering and energy; Power lasers; Quantum well devices; Quantum well lasers; Quantum wells; Voltage; InGaN; LED; photoluminescence; quantum wells;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429864
