External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes

Author

Inoue, T. ; Fujiwara, K. ; Sheu, J.K.

Author_Institution

Kyushu Inst. of Technol., Kitakyushu

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

7

Lastpage

10

Abstract

Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination of PL intensity under the reverse bias conditions.

Keywords

gallium; indium compounds; light emitting diodes; nitrogen; photoexcitation; photoluminescence; semiconductor quantum wells; InGaN; blue emission band; external field effects; photoexcitation power dependence; photoluminescence property; quantum-well light-emitting diodes; reverse bias voltage; Gallium nitride; Laser excitation; Light emitting diodes; Photoluminescence; Power engineering and energy; Power lasers; Quantum well devices; Quantum well lasers; Quantum wells; Voltage; InGaN; LED; photoluminescence; quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429864

Filename

4429864