Characterisation of Electron Transport in MBE Grown Indium Nitride

Author

Fehlberg, Tamara B. ; Umana-Membreno, Gilberto A. ; Nener, Brett D. ; Parish, Giacinta ; Gallinat, Chad S. ; Koblmüller, Gregor ; Bernardis, Sarah ; Speck, James S.

Author_Institution

Western Australia Univ., Crawley

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

11

Lastpage

14

Abstract

Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity data were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of two electron species, attributed to the bulk and a surface accumulation layer. While the properties of the bulk electron species remain consistent between the samples, grown under similar conditions, the surface properties are found to vary significantly.

Keywords

electron transport theory; indium compounds; molecular beam epitaxial growth; bulk electron species; electron transport characterisation; grown indium nitride; molecular beam epitaxy; quantitative mobility spectrum analysis; surface accumulation layer; variable field hall; Data mining; Electron mobility; Gallium nitride; Indium; Magnetic field measurement; Molecular beam epitaxial growth; Plasma measurements; Plasma temperature; Temperature measurement; Thermal variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429865

Filename

4429865