Crystalline anisotropic dry etching for single crystal silicon

This paper describes the possibility of the crystalline anisotropic etching of single-crystal silicon using a fully dry etching process. Conventionally, the crystalline anisotropic etching of silicon has been achieved only using specific wet solutions. In the proposed method, the anisotropic etching is made dominant by controlling the etching energy under specific dry etching conditions. The maximum crystalline anisotropic degree is 68% at present. It is expected that complicated three-dimensional microscale silicon structures can be formed by the fully dry process proposed in this paper.