Title :
Carburisation layers for the growth of silicon carbide on silicon
Author :
Attolini, G. ; Watts, B. ; Bosi, M. ; Frigeri, C. ; Ferrari, C. ; Salviati, G. ; Besagni, T. ; Kaciulis, S. ; Pandolfi, L.
Author_Institution :
lMEM-CNR, Parma
Abstract :
This work describes the growth of 3C-SiC on silicon by vapour phase epitaxy. The carburisation, a key step to nucleating SiC on silicon is treated in detail. The carburisation layer, characterised by X ray diffraction, and transmission electron microscopy, was found to be smooth, epitaxial and monocrystalline on the substrate. Chemical analysis by XPS shows that the layer is Si rich and that residues of the precursors remain on the surface.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; elemental semiconductors; silicon; silicon compounds; substrates; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; Chemical analysis; X ray diffraction; XPS; carburisation layers; monocrystalline; silicon; silicon carbide; substrate; transmission electron microscopy; vapour phase epitaxy; Atomic force microscopy; Epitaxial growth; Hafnium; Silicon carbide; Substrates; Surface treatment; Temperature; Transmission electron microscopy; Wet etching; X-ray diffraction; XPS; nucleation; silicon carbide; vapour phase epitaxy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429871
