DocumentCode
2766305
Title
Correlation of Pseudo-MOS transistor and Hall effect measurements in thin SOI wafers
Author
Nguyen, Q.T. ; Antoszewski, J. ; Faraone, L. ; Bresson, N. ; Gentil, P. ; Cristoloveanu, S.
Author_Institution
IMEP-INP Grenoble-MINATEC, Grenoble
fYear
2006
fDate
6-8 Dec. 2006
Firstpage
39
Lastpage
40
Abstract
The carrier mobility in advanced SOI wafers was investigated by Pseudo-MOS transistor and Hall effect. Substrate biasing enables these measurements even when the Si film is fully depleted. The data indicate a good correlation between the two methods. Hall mobility is higher than the effective pseudo-MOSFET mobility as a result of prevailing phonon scattering.
Keywords
Hall mobility; MOSFET; silicon; silicon-on-insulator; Hall effect measurements; Hall mobility; SOI wafers; Si; Si film; carrier mobility; phonon scattering; pseudo-MOS transistor; pseudo-MOSFET mobility; substrate biasing; Electron mobility; Hall effect; MOSFETs; Magnetic field measurement; Phonons; Semiconductor films; Silicon on insulator technology; Substrates; Transconductance; Transistors; Hall effect; Pseudo-MOSFET; Sillcon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location
Perth, WA
Print_ISBN
978-1-4244-0578-7
Electronic_ISBN
978-1-4244-0578-7
Type
conf
DOI
10.1109/COMMAD.2006.4429873
Filename
4429873
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