Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

Author

Tsen, G.K.O. ; Sewell, R. ; Atanacio, A.J. ; Prince, K.E. ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J. ; Faraone, L.

Author_Institution

Univ. of Western Australia, Crawley

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

55

Lastpage

58

Abstract

Extrinsic p-type doping of Mercury Cadmium Tel-luride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation.

Keywords

Fourier transform spectroscopy; annealing; arsenic; mercury compounds; molecular beam epitaxial growth; semiconductor devices; semiconductor doping; spectral analysers; Fourier transform infrared transmission spectrometry; Hall effect; activation annealing; arsenic cracker cell; molecular beam epitaxy; p-type doping; quantitative mobility spectrum analysis; secondary ion mass spectrometry; variable field magneto-transport measurement; Annealing; Cadmium; Couplings; Doping; Fourier transforms; Infrared spectra; Magnetic analysis; Magnetic field measurement; Mass spectroscopy; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429878

Filename

4429878