Title :
Low thermal-budget silicon sealed-cavity microencapsulation process
Author :
Sedky, S. ; Tawfik, H. ; Abdel Aziz, A. ; ElSaegh, S. ; Graham, A.B. ; Provine, J. ; Howe, R.T.
Author_Institution :
American Univ. in Cairo, Cairo, Egypt
Abstract :
This work demonstrates the application of pulsed-laser processing for sealing release holes in silicon membranes. Holes in the membrane are sealed without deposition, similar to the silicon surface migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the pulsed-laser process localizes the heat to the top few microns of the substrate, with the bulk kept at near to room temperature. In addition, there is no need for special surface treatment, or for a controlled environment. Furthermore, the treatment can be applied to selected regions of the substrate.
Keywords :
electronics packaging; elemental semiconductors; encapsulation; laser materials processing; membranes; microfabrication; seals (stoppers); silicon; surface treatment; Si; pulsed-laser process; pulsed-laser processing; silicon membranes release holes sealing; silicon surface migration sealing process; surface treatment; temperature 293 K to 298 K; thermal-budget silicon sealed-cavity microencapsulation process; Argon; Laser beams; Quantum dot lasers; Seals; Silicon; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734415