Title :
An Optoelectronic Switch with Multiple Operation States
Author :
Weng, Tzu-Yen ; Tsai, Jung-Hui ; Guo, Der-Feng
Author_Institution :
Nat. Kaohsiung Normal Univ., Kaohsiung
Abstract :
A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy (MBE), has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (delta-doped) quantum well into an n -GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the delta-doped well and the sequential avalanche multiplications in the reverse-biased pn and metal-semiconductor (M-S) junctions, a double S-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The STOS shows a flexible optical function related to the triangular barrier height controllable by incident light. The multistate is switchable by both optical and electrical inputs.
Keywords :
Schottky barriers; electro-optical switches; gallium arsenide; indium compounds; molecular beam epitaxial growth; optoelectronic devices; semiconductor quantum wells; InGaAs; Schottky-contact triangular-barrier optoelectronic switch; current-voltage characteristics; delta-doped quantum well; metal-semiconductor junctions; molecular beam epitaxy; negative-differential-resistance; sequential avalanche multiplications; Communication switching; Indium gallium arsenide; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical switches; Physics; Potential well; Substrates; Voltage; Schottky contact; negative differential resistance; optoelectronic switch; triangular barrier;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429887
