Title :
An AlGaAs/GaAs/InAlGaP Optoelectronic Switch
Author :
Weng, Tzu-Yen ; Tsai, Jung-Hui ; Guo, Der-Feng
Author_Institution :
Nat. Kaohsiung Normal Univ., Kaohsiung
Abstract :
Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage Vs and decreases the switching current Is, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160degC . This high-temperature performance provides the studied device with potential high-temperature applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; negative resistance devices; optical switches; optoelectronic devices; AlGaAs-GaAs-InAlGaP; negative differential resistance; optoelectronic device; optoelectronic switch; switching current; switching voltage; two-terminal switching performance; Electric resistance; Etching; Gallium arsenide; High speed optical techniques; Lighting; Optical buffering; Optical control; Optical switches; Optoelectronic devices; Voltage; bulk barrier; negative differential resistance; optoelectronic switch;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429888
