An AlGaAs/GaAs/InAlGaP Optoelectronic Switch

Author

Weng, Tzu-Yen ; Tsai, Jung-Hui ; Guo, Der-Feng

Author_Institution

Nat. Kaohsiung Normal Univ., Kaohsiung

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

94

Lastpage

97

Abstract

Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V_s and decreases the switching current I_s, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160degC . This high-temperature performance provides the studied device with potential high-temperature applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; negative resistance devices; optical switches; optoelectronic devices; AlGaAs-GaAs-InAlGaP; negative differential resistance; optoelectronic device; optoelectronic switch; switching current; switching voltage; two-terminal switching performance; Electric resistance; Etching; Gallium arsenide; High speed optical techniques; Lighting; Optical buffering; Optical control; Optical switches; Optoelectronic devices; Voltage; bulk barrier; negative differential resistance; optoelectronic switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429888

Filename

4429888