Title :
EMI susceptibility of DTMOS opamps
Author_Institution :
Dept. of Inf. Eng., Univ. of Brescia, Brescia, Italy
Abstract :
The susceptibility to electromagnetic interference (EMI) of an amplifier based on dynamic threshold voltage MOS transistors (DTMOSs) has been analysed and improved thanks to an easy modification of the input differential stage. The final opamp has been designed in a 0.18 μm standard CMOS process.
Keywords :
CMOS analogue integrated circuits; MOSFET; electromagnetic interference; magnetic susceptibility; operational amplifiers; DTMOS opamps; EMI susceptibility; dynamic threshold voltage MOS transistors; electromagnetic interferences; final opamp; input differential stage; size 0.18 mum; standard CMOS process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.3941
