Title :
Development of high power medium-wave radio transmitter with SIT
Author :
Yamaguchi, T. ; Naka, H. ; Nasu, Y. ; Hayeiwa, K. ; Miyazaki, T.
Author_Institution :
Japan Broadcasting Corp., Tokyo, Japan
Abstract :
The authors present a new type of 20 to 100 kW radio transmitter using high-frequency power SITs (static induction transistor). This new version employs power SITS in its RF power amplifiers and modulators. High-frequency power SITs with 600 V sustaining voltage, 0.6 Ω on-resistance, and 400 W allowable loss have been designed and fabricated. The development of SIT-equipped transmitters is described
Keywords :
field effect transistor circuits; field effect transistors; power amplifiers; radio transmitters; radiofrequency amplifiers; 0.6 ohm; 20 to 100 kW; 600 V; RF power amplifiers; SIT-equipped transmitters; allowable loss; high power medium-wave radio transmitter; modulators; on-resistance; static induction transistor; sustaining voltage;
Conference_Titel :
Broadcasting Convention, 1992. IBC., International
Conference_Location :
Amsterdam
Print_ISBN :
0-85296-547-8
