Investigation of an InGaP/GaAs/InGaAs Step-Emitter Bipolar Transistor

Author

Tsai, Jung-Hui ; Der-Feng Guo ; Weng, Tzu-Yen ; Wu, Ching-Han

Author_Institution

Nat. Kaohsiung Normal Univ., Kaohsiung

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

141

Lastpage

143

Abstract

A high-performance InGaP/GaAs/InGaAs step-emitter bipolar transistor is demonstrated. The energy bands and carrier distributions are described by theoretical analysis. Because the confinement effect for holes is substantially enhanced by the addition of an InGaAs quantum well between base-emitter junction as compared to the conventional InGaP/GaAs heterojunction bipolar transistor, the experimental device exhibits a high current gain up to 220. In particular, a relatively low collector-emitter offset voltage of 70 mV is observed, attributed to the neglect of potential spike at base-emitter junction by the employments of an n-type GaAs emitter and an n-InGaAs quantum well. Consequently, the excellent performances of the studied device provide a promise for linear amplifiers and circuit applications.

Keywords

III-V semiconductors; band structure; carrier mobility; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor quantum wells; InGaP-GaAs-InGaAs; carrier distributions; collector-emitter offset voltage; confinement effect; energy bands; quantum well; step-emitter bipolar transistor; theoretical analysis; Bipolar transistors; Carrier confinement; Circuits; Employment; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Low voltage; Physics; Power engineering and energy; confinement effect; heterojunction bipolar transistor; offset voltage; potential spike; step-emitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429900

Filename

4429900