Title :
Investigation of an InGaP/GaAs/InGaAs Step-Emitter Bipolar Transistor
Author :
Tsai, Jung-Hui ; Der-Feng Guo ; Weng, Tzu-Yen ; Wu, Ching-Han
Author_Institution :
Nat. Kaohsiung Normal Univ., Kaohsiung
Abstract :
A high-performance InGaP/GaAs/InGaAs step-emitter bipolar transistor is demonstrated. The energy bands and carrier distributions are described by theoretical analysis. Because the confinement effect for holes is substantially enhanced by the addition of an InGaAs quantum well between base-emitter junction as compared to the conventional InGaP/GaAs heterojunction bipolar transistor, the experimental device exhibits a high current gain up to 220. In particular, a relatively low collector-emitter offset voltage of 70 mV is observed, attributed to the neglect of potential spike at base-emitter junction by the employments of an n-type GaAs emitter and an n-InGaAs quantum well. Consequently, the excellent performances of the studied device provide a promise for linear amplifiers and circuit applications.
Keywords :
III-V semiconductors; band structure; carrier mobility; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor quantum wells; InGaP-GaAs-InGaAs; carrier distributions; collector-emitter offset voltage; confinement effect; energy bands; quantum well; step-emitter bipolar transistor; theoretical analysis; Bipolar transistors; Carrier confinement; Circuits; Employment; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Low voltage; Physics; Power engineering and energy; confinement effect; heterojunction bipolar transistor; offset voltage; potential spike; step-emitter;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429900
