An improved InP/InGaAs pnp HBT with δ-doped sheet between emitter-base junction

Author

Tsai, Jung-Hui ; Guo, Der-Feng ; Weng, Tzu-Yen ; Kang, Yu-Chi ; Wu, Ching-Han ; Hsu, I-Hsuan

Author_Institution

Nat. Kaohsiung Normal Univ., Kaohsiung

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

144

Lastpage

147

Abstract

The characteristics and device mechanism of InP/InGaAs pnp δ-doped heterojunction bipolar transistor are demonstrated. The additions of a δ-doped sheet and two spacer layers efficiently eliminate the potential spike at emitter-base junction, lower the emitter-collector offset voltage, and increase the confinement effect for electrons, simultaneously. The components of base current and the influence of delta-doped sheet on the potential spike are depicted. Experimentally, excellent device performances including a maximum current gain of 50 and a low offset voltage of 70 mV are achieved for the device with a δ-doped density of 2 x 10¹² cm^-2 . The experimental results are consistent with the theoretical analysis.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor heterojunctions; InGaAs; InP; emitter-base junction; emitter-collector offset voltage; heterojunction bipolar transistor; Degradation; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Microwave integrated circuits; Microwave transistors; Performance gain; δ-doped; InP/InGaAs; confinement effect; heterojunction bipolar transistor; offset voltage; pnp; potential spike;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0577-0

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429901

Filename

4429901