Title :
Magnetic and Crystalline properties of GaMnNAs and Low-temperature annealing effect
Author :
Kobayashi, Genki ; Mori, Takahiro ; Kato, Takashi ; Fujii, Katsushi ; Hanada, Takashi ; Makino, Hisao ; Yao, Takafumi
Abstract :
We have studied on the crystalline and magnetic properties of ferromagnetic GaMnAs and nitrogen doped GaMnNAs films by plasma-assisted molecular beam epitaxy (p-MBE). The Curie temperature (Tc) of GaMnNAs increased slightly in a range of low nitrogen content compared to GaMnAs and showed the saturation with increase of Mn content. We have also investigated an annealing effect to the Tc.
Keywords :
Curie temperature; III-V semiconductors; annealing; ferromagnetic materials; gallium arsenide; gallium compounds; magnetic semiconductors; manganese compounds; molecular beam epitaxial growth; plasma materials processing; Curie temperature; GaMnNAs; crystalline property; ferromagnetic GaMnAs; low-temperature annealing effect; magnetic property; plasma-assisted molecular beam epitaxy; Annealing; Crystallization; Magnetic films; Magnetic properties; Molecular beam epitaxial growth; Nitrogen; Plasma properties; Plasma temperature; Saturation magnetization; Temperature distribution; GaMnAs; GaMnNAs; diluted magnetic semiconductor; molecular beam epitaxy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429903
