DocumentCode :
2766825
Title :
Low-Temperature Growth of A1N thin films on ZnO templates prepared on Ak2O3 substrates
Author :
Im, In-Ho ; Park, Jin-sub ; Minegishi, Tsutomu ; Park, Seung-Hwan ; Hanada, Takashi ; Chang, Ji-Ho ; Dong-Cheol Oh ; Cho, Meung-Whan ; Yao, Takafumi
Author_Institution :
Tohoku Univ., Tokyo
fYear :
2006
fDate :
6-8 Dec. 2006
Firstpage :
156
Lastpage :
159
Abstract :
We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400degC, which is quite low compared to the conventional growth temperature of 1000degC. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; chemical interdiffusion; magnesium compounds; molecular beam epitaxial growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; AlN; SIMS; ZnO-MgO-Al2O3; crystal quality; diffusion length; growth temperature; interdiffusion; low-temperature growth; single-crystalline layers; temperature 1000 C; temperature 400 C; thin films; Buffer layers; Gallium nitride; Lattices; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Plasma temperature; Substrates; Transistors; Zinc oxide; Al flux; Low Temperature AlN; RHEED; SIMS; ZnO template;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
Type :
conf
DOI :
10.1109/COMMAD.2006.4429904
Filename :
4429904
Link To Document :
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