Title :
Optimised Two-Temperature Growth of GaAs Nanowires by Metalorganic Chemical Vapour Deposition
Author :
Joyce, Hannah J. ; Kim, Y. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Australian Nat. Univ., Canberra
Abstract :
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; nanotechnology; nanowires; nucleation; semiconductor growth; vapour phase epitaxial growth; B-oriented nanowire growth; GaAs; epitaxial growth; metalorganic chemical vapour deposition; nanowire tapering; nucleation; two-temperature growth; Chemical engineering; Chemical vapor deposition; Cooling; Epitaxial growth; Gallium arsenide; Gold; Nanoparticles; Nanowires; Pollution measurement; Temperature dependence; GaAs; epitaxy; growth; nanowire; nucleation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429908
