Adhesion energy and shape of nanogap InP/InGaAs microcantilevers

Author

Makowski, Jan D. ; Gawarikar, Anand S. ; Talghader, Joseph J.

Author_Institution

Univ. of Minnesota, Minneapolis

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

212

Lastpage

215

Abstract

The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 plusmn 16 mJm^-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm^-2.

Keywords

adhesion; cantilevers; gallium arsenide; indium compounds; light interferometry; micromechanical devices; semiconductor quantum wells; InGaAs; InGaAs microcantilevers; InGaAs quantum wells; InP; InP microcantilevers; adhesion energy; collapsed microcantilevers; nanogap microcantilevers; optical interferometry; standard adhesion models; van-der-Waals forces; Adhesives; Electric variables measurement; Energy measurement; Indium gallium arsenide; Indium phosphide; Optical interferometry; Quantum computing; Shape measurement; Structural beams; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429918

Filename

4429918