DocumentCode :
2767029
Title :
Adhesion energy and shape of nanogap InP/InGaAs microcantilevers
Author :
Makowski, Jan D. ; Gawarikar, Anand S. ; Talghader, Joseph J.
Author_Institution :
Univ. of Minnesota, Minneapolis
fYear :
2006
fDate :
6-8 Dec. 2006
Firstpage :
212
Lastpage :
215
Abstract :
The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 plusmn 16 mJm-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm-2.
Keywords :
adhesion; cantilevers; gallium arsenide; indium compounds; light interferometry; micromechanical devices; semiconductor quantum wells; InGaAs; InGaAs microcantilevers; InGaAs quantum wells; InP; InP microcantilevers; adhesion energy; collapsed microcantilevers; nanogap microcantilevers; optical interferometry; standard adhesion models; van-der-Waals forces; Adhesives; Electric variables measurement; Energy measurement; Indium gallium arsenide; Indium phosphide; Optical interferometry; Quantum computing; Shape measurement; Structural beams; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
Type :
conf
DOI :
10.1109/COMMAD.2006.4429918
Filename :
4429918
Link To Document :
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