Title :
A physical based photodiode model
Author :
Naev, Tomasz ; Seegebrecht, Peter
Author_Institution :
Christian-Albrechts Univ., Kiel
Abstract :
This work presents an analytical model which describes the opto-electronic conversion of a planar double photodiode. Our model predicts the steady-and the dynamic-state of the photodiode with high accuracy without using any fit parameters as will be shown by comparison with numerical and experimental results.
Keywords :
optoelectronic devices; photodiodes; semiconductor device models; frequency response; optoelectronic conversion; physical based photodiode model; planar double photodiode; semiconductor device modeling; spectral sensitivity; Charge carrier density; Frequency response; Infrared spectra; Integrated circuit modeling; Laplace equations; Optical devices; Optical sensors; Photoconductivity; Photodiodes; Thyristors; OEIC; frequency response; photodiode; puls response; semiconductor device modeling; spectral sensetivity;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429922
